DMP1245UFCL document number: ds35505 rev. 1 - 2 1 of 7 www.diodes.com november 2011 ? diodes incorporated DMP1245UFCL advance information a product line o f diodes incorporated 12v p-channel enhanc ement mode mosfet summary v (br)dss r ds(on) max i d max -12v 29m @v gs = -4.5v -6.6 a 45m @v gs = -2.5v -5.3 a 60m @v gs = -1.8v -4.6 a 100m @v gs = -1.5v -3.5 a application this device provides a high performance, low r ds(on) p channel mosfets in the thermally and space efficient x1-dfn1616-6 package. the low r ds(on) of this mosfet ensures conduction losses are kept making it ideal for use as a: ? battery disconnect switch ? load switch for power management functions features and benefits ? typical off board profile of 0.5mm - ideally suited for thin applications ? low r ds(on) ? minimizes conduction losses ? pcb footprint of 2.56mm 2 ? 3kv esd protected gate ? protected against human borne esd ? ?lead-free?, rohs compliant (note 1) ? "green" device (note 2) mechanical data ? case: x1-dfn1616-6 type e ? case material: molded plastic, ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? lead free plating (nipdau fini sh over copper leadframe). ? terminals: solderable per mil-std-202, method 208 ? weight: 0.04 grams (approximate) ordering information (note 3) product marking reel size (inches) tape width (mm) quantity per reel DMP1245UFCL-7 p5 7 8 3,000 notes: 1. no purposefully added lead. 2. diodes inc?s ?green? policy can be found on our website at http://www.diodes.com 3. for packaging details, go to our website at http://www.diodes.com marking information date code key year 2011 2012 2013 2014 2015 2016 2017 code y z a b c d e month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d x1-dfn1616-6 type e device symbol bottom view top view top view pin-out pin 1 p5 = product type marking code ym = date code marking y = year (ex: x = 2010) m = month (ex: 9 = september) source gate protection diode gate drai n p5 ym
DMP1245UFCL document number: ds35505 rev. 1 - 2 2 of 7 www.diodes.com november 2011 ? diodes incorporated DMP1245UFCL advance information a product line o f diodes incorporated maximum ratings @t a = 25c unless otherwise specified characteristic symbol value units drain-source voltage v dss -12 v gate-source voltage v gss 8 v continuous drain current (note 5) @t a = 25c @t a = 70c i d -6.6 -5.25 a pulsed drain current t p = 10 s i dm -16.67 a thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value units total power dissipation (note 4) p d 613 mw (note 5) 1.7 w thermal resistance, junction to ambient (note 4) r ja 204 c/w (note 5) 74 operating and storage temperature range t j, t stg -55 to +150 c notes: 4. for a device surface mounted on minimum recommended pad layout, in still air conditions; the device is measured when operating in a steady state condition. 5. for a device surface mounted on 25mm by 25mm by 1.6mm fr4 pcb with high coverage of single sided 2oz copper, in still air co nditions; the device is measured when operating in a steady state condition. thermal characteristics 0 10 20 30 40 50 60 70 80 90 100 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse duration time (sec) fig. 1 single pulse maximum power dissipation 1 p(pk), peak transient power (w) single pulse r =205c/w r(t)=r*r(t) t-t =p*r (t) ? ja ja ja ja ja 0.1 1 10 100 -v , drain-source voltage (v) ds fig. 2 soa, safe operation area i , drain current (a) d 0.1 1 10 100 i ( a ) @ p = 1 m s d w i ( a ) @ p = 1 0 0 s d w 0.01 i (a) @p =10s dw i (a) @ dc d i(a) @p =1s dw i (a) @p =100ms dw i (a) @p =10ms dw i(a) @ p =10s d w t = 150 c t= 25c single pulse j(max) a r limited ds(on)
DMP1245UFCL document number: ds35505 rev. 1 - 2 3 of 7 www.diodes.com november 2011 ? diodes incorporated DMP1245UFCL advance information a product line o f diodes incorporated 0.001 0.01 0.1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, pulse duration times (sec) fig. 03 transient thermal resistance r(t)=r(t) * r ? ja ja r = 205c/w duty cycle, d=t1/ t2 ja r(t), transient thermal resistance 1 electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 6) drain-source breakdown voltage bv dss -12 ? ? v v gs = 0v, i d = -250a zero gate voltage drain current t j = 25c i dss ? ? -1 a v ds = -12.0v, v gs = 0v gate-source leakage i gss ? ? 10 a v gs = 8.0v, v ds = 0v on characteristics (note 6) gate threshold voltage v gs ( th ) -0.3 -0.6 -0.95 v v ds = v gs , i d = -250a static drain-source on-resistance r ds (on) ? 25 29 m ? v gs = -4.5v, i d = - 4a ? 31 45 v gs = -2.5v, i d = - 3.5a ? 40 60 v gs = -1.8v, i d = - 1a ? 60 100 v gs = -1.5 v, i d = - 0.5a forward transfer admittance |y fs | 0.4 3 - s v ds = -5v, i d = -2a diode forward voltage v sd - - -1.0 v v gs = 0v, i d = -2a dynamic characteristics (note 7) input capacitance c iss - 1357.4 - pf v ds = -10v, v gs = 0v f = 1.0mhz output capacitance c oss - 499 - pf reverse transfer capacitance c rss - 273.6 - pf gate resistance r g - 14.26 - ? v ds = 0v, v gs = 0v, f = 1mhz total gate charge q g - 16.1 - nc v gs = -4.5v i d = -1a, v ds = -10v - 26.1 - nc v gs = -8v gate-source charge q g s - 1.71 - nc gate-drain charge q g d - 20.48 - nc turn-on delay time t d ( on ) - 15.2 - ns v gs = -2.5v, v ds = -10v i d = -180ma, r g = 2.0 ? , turn-on rise time t r - 33.11 - ns turn-off delay time t d ( off ) - 219.4 - ns turn-off fall time t f - 217.64 - ns notes: 6. short duration pulse test used to minimize self-heating effect. 7. guaranteed by design. not subject to production testing.
DMP1245UFCL document number: ds35505 rev. 1 - 2 4 of 7 www.diodes.com november 2011 ? diodes incorporated DMP1245UFCL advance information a product line o f diodes incorporated fig. 4 typical output characteristics -v , drain-source voltage (v) ds -i , d r ai n c u r r e n t (a) d 0 4 8 12 16 20 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 v = 2.0v gs v = 2.5v gs v = 4.5v gs v = 8.0v gs v = 1.8v gs v = 1.5v gs v = 1.2v gs fig. 5 typical transfer characteristic -v , gate-source voltage (v) gs -i , d r ain c u r r en t (a) d 0 4 8 12 16 20 0 0.5 1.0 1.5 2.0 2.5 3.0 fig. 6 typical on-resistance vs. drain current and gate voltage i , drain-source current (a) d r , drain-source on-resistance ( ) ds(on) 0 0.01 0.02 0.03 0.04 0.05 0.06 048121620 v = -4.5v gs v = -3.5v gs v = -2.5v gs v = -1.8v gs v = -1.5v gs i , drain current (a) d fig. 7 typical on-resistance vs. drain current and temperature r , d r ai n -s o u r c e o n - r esis t a n c e ( ) ds(on) 0 0.02 0.04 0.06 048121620 t = 85c a t = 25c a t = -55c a t = 150c a v = 4.5v gs t = 125c a -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a fig. 8 on-resistance variation with temperature r , d r ain-s o u r c e o n- r esis t an c e (normalized) dson 0.5 0.7 0.9 1.1 1.3 1.5 1.7 v = -2.5v i = -5a gs d v = -4.5v i = -10a gs d fig. 9 on-resistance variation with temperature -50-250255075100125150 t , ambient temperature (c) a r , drain-source on-resistance ( ) dson 0 0.01 0.02 0.03 0.04 0.05 0.06 v = -4.5v i = -10a gs d v = -2.5v i = -5a gs d
DMP1245UFCL document number: ds35505 rev. 1 - 2 5 of 7 www.diodes.com november 2011 ? diodes incorporated DMP1245UFCL advance information a product line o f diodes incorporated t , ambient temperature (c) a fig. 10 gate threshold variation vs. ambient temperature v, g a t e t h r es h o ld v o l t a g e (v) gs(th) 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -50 -25 0 25 50 75 100 125 150 i = -250a d i = -1ma d fig. 11 diode forward voltage vs. current v , source-drain voltage (v) sd i, s o u r c e c u r r en t (a) s t = 25c a 0 4 8 12 16 20 0.4 0.6 0.8 1 1.2 fig. 12 typical drain-source leakage current vs. voltage v , drain-source voltage (v) ds i, leaka g e c u r r en t (na) dss 1 10 100 1,000 10,000 100,000 024 681012 t = 25c a t = 85c a t = 125c a t = 150c a 048121620 v , drain-source voltage (v) ds fig. 13 typical junction capacitance c , junction capacitance (pf) t 0 500 1,000 1,500 2,000 2,500 c iss c oss c rss fig. 14 gate-charge characteristics q , total gate charge (nc) g v , gate-source voltage (v) gs v = -10v i = -1a ds d 0 2 4 6 8 0 5 10 15 20 25 30
DMP1245UFCL document number: ds35505 rev. 1 - 2 6 of 7 www.diodes.com november 2011 ? diodes incorporated DMP1245UFCL advance information a product line o f diodes incorporated package outline dimensions suggested pad layout x1-dfn1616-6 type e dim min max typ a 0.47 0.53 0.50 a1 0 0.05 0.02 a3 ? ? 0.13 b 0.20 0.30 0.25 b1 0.10 0.30 0.20 d 1.55 1.65 1.60 d2 0.57 0.77 0.67 e 1.55 1.65 1.60 e2 1.30 1.50 1.40 e ? ? 0.50 l 0.25 0.35 0.30 l1 0.52 0.72 0.62 z ? ? 0.175 all dimensions in mm dimensions value (in mm) c 0.500 x 0.300 x1 0.200 x2 0.720 x3 0.400 y 0.475 y1 0.620 y2 1.900 x (6x) c y (2x) y2 x1 y1 x2 x3 d e e b(6x) l(2x) a a3 z(4x) a1 l1 b1 e2 d2
DMP1245UFCL document number: ds35505 rev. 1 - 2 7 of 7 www.diodes.com november 2011 ? diodes incorporated DMP1245UFCL advance information a product line o f diodes incorporated important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or an y product described herein; neither does di odes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or us er of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical component s in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support dev ice or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2011, diodes incorporated www.diodes.com
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